Epitaxial formation of a metastable hexagonal nickel-silicide
- K. De Keyser
- C. Van Bockstael
- et al.
- 2008
- Electrochemical and Solid-State Letters
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19 results for R.L. Van Meirhaeghe
In-situ X-ray Diffraction study of Metal Induced Crystallization of amorphous silicon
- W. Knaepen
- C. Detavernier
- et al.
- 2008
- Thin Solid Films
Thin film solid-state reactions forming carbides as contact materials for carbon-containing semiconductors
- W.P. Leroy
- C. Detavernier
- et al.
- 2007
- Journal of Applied Physics
Formation and morphological stability of NiSi in the presence of W, Ti, and Ta alloying elements
- D. Deduytsche
- C. Detavernier
- et al.
- 2007
- Journal of Applied Physics
Influence of Ge substrate crystallinity on Co germanide formation in solid-state reactions
- K. Opsomer
- D. Deduytsche
- et al.
- 2007
- Applied Physics Letters
Solid-state formation of titanium carbide and molybdenum carbide as contacts for carbon-containing semiconductors
- W.P. Leroy
- C. Detavernier
- et al.
- 2006
- Journal of Applied Physics
High-temperature degradation of NiSi films: Agglomeration versus NiSi 2 nucleation
- D. Deduytsche
- C. Detavernier
- et al.
- 2005
- Journal of Applied Physics
CoSi2 formation in the presence of Ti, Ta or W
- C. Detavernier
- C. Lavoie
- et al.
- 2004
- Thin Solid Films
Low-temperature formation of CoSi 2 in the presence of Au
- C. Detavernier
- C. Lavoie
- et al.
- 2004
- Journal of Applied Physics