ICE: Ionic contrast enhancement for organic solvent negative tone develop
- Linda K. Sundberg
- Gregory M. Wallraff
- et al.
- 2014
- SPIE Advanced Lithography 2014
Publications
97 results for Karen Petrillo
Precise CD-SEM metrology of resist patterns at around 20 nm for 0.33NA EUV lithography
- Nobuhiro Okai
- Erin Lavigne
- et al.
- 2014
- SPIE Advanced Lithography 2014
Enhancing resolution with pupil filtering for projection printing systems with fixed or restricted illumination angular distribution
- Greg McIntyre
- Leon Teeuwen
- et al.
- 2013
- SPIE Advanced Lithography 2013
Monitoring the evolution of Line Edge Roughness during resist development using an analog of quenched flow kinetics
- M.I. Sanchez
- L.K. Sundberg
- et al.
- 2013
- SPIE Advanced Lithography 2013
Fundamental study of extreme UV resist line edge roughness: Characterization, experiment, and modeling
- Ramakrishnan Ayothi
- Lovejeet Singh
- et al.
- 2012
- Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Optimization of pitch-split double patterning phoresist for applications at the 16nm node
- Steven J. Holmes
- Cherry Tang
- et al.
- 2011
- ASMC 2011
EUV OPC for 56 nm metal pitch
- Martin Burkhardt
- Matt Colburn
- et al.
- 2011
- SPIE Advanced Lithography 2011
Optimization of pitch-split double patterning photoresist for applications at the 16nm node
- Steven J. Holmes
- Cherry Tang
- et al.
- 2011
- SPIE Advanced Lithography 2011
Fundamental investigation of Negative Tone Development (NTD) for the 22nm node (and beyond)
- Guillaume Landie
- Yongan Xu
- et al.
- 2011
- SPIE Advanced Lithography 2011
Revisit pattern collapse for 14nm node and beyond
- Kenji Yoshimoto
- Craig Higgins
- et al.
- 2011
- SPIE Advanced Lithography 2011