Conditions for an Oxide-Free Si Surface for Low-Temperature Processing: Steady-State Boundary
- P. Agnello
- T.O. Sedgwick
- 1992
- JES
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71 results for T.O. Sedgwick
Silicon epitaxy from silane by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1992
- Applied Physics Letters
Selective growth of Si/SiGe resonant tunneling diodes by atmospheric pressure chemical vapor deposition
- A. Zaslavsky
- D.A. Grützmacher
- et al.
- 1992
- Applied Physics Letters
Atmospheric pressure chemical vapor deposition of Si and SiGe at low temperatures
- T.O. Sedgwick
- P. Agnello
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Characterization of devices fabricated in films grown at low temperature by atmospheric pressure CVD
- T.O. Sedgwick
- V.P. Kesan
- et al.
- 1991
- IEDM 1991
High phosphorus doping of epitaxial silicon at low temperature and atmospheric pressure
- T.O. Sedgwick
- P. Agnello
- et al.
- 1991
- Applied Physics Letters
Selective growth of silicon-germanium alloys by atmospheric-pressure chemical vapor deposition at low temperatures
- P. Agnello
- T.O. Sedgwick
- et al.
- 1991
- Applied Physics Letters
Low temperature selective epitaxial growth of silicon at atmospheric pressure in an ultra-clean system
- T.O. Sedgwick
- P. Agnello
- et al.
- 1990
- Silicon Materials Science and Technology 1990
Low-temperature selective epitaxial growth of silicon at atmospheric pressure
- T.O. Sedgwick
- M. Berkenblit
- et al.
- 1989
- Applied Physics Letters
Rapid thermal processing, an integral part of shallow junction formation
- T.O. Sedgwick
- 1989
- Nuclear Inst. and Methods in Physics Research, B