Implantation damage and the anomalous transient diffusion of ion-implanted boron
- Alwin E. Michel
- W. Rausch
- et al.
- 1987
- Applied Physics Letters
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35 results for Alwin E. Michel
Boron, phosphorus, and arsenic diffusion in tisi2
- P. Gas
- V.R. Deline
- et al.
- 1986
- Journal of Applied Physics
In Situ Arsenic-Doped Polysilicon for VLSI Applications
- Maurizio Arienzo
- Andrew C. Megdanis
- et al.
- 1986
- IEEE T-ED
Investigation of transient diffusion effects in rapid thermally processed ion implanted arsenic in silicon
- T.O. Sedgwick
- Alwin E. Michel
- et al.
- 1985
- Applied Physics Letters
Channeling in low energy boron ion implantation
- Alwin E. Michel
- R.H. Kastl
- et al.
- 1984
- Applied Physics Letters
The poly-single crystalline silicon interface
- C.Y. Wong
- Alwin E. Michel
- et al.
- 1984
- Journal of Applied Physics
Diffusion of arsenic in bilayer polycrystalline silicon films
- M. Arienzo
- Y. Komem
- et al.
- 1984
- Journal of Applied Physics
Ion-implanted polysilicon diffusion sources
- Alwin E. Michel
- R.H. Kastl
- et al.
- 1983
- Nuclear Instruments and Methods In Physics Research
Effects of Impurity Compensation on Injection Current in Si Bipolar Transistors
- D.D. Tang
- Alwin E. Michel
- 1980
- IEEE T-ED
High-energy emission in GaAs electroluminescent diodes
- M.I. Nathan
- T.N. Morgan
- et al.
- 1966
- Physical Review