Increased range of Fermi-level stabilization energy at metal/melt-grown GaAs(100) interfaces
- S. Chang
- I.M. Vitomirov
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
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101 results for G.D. Pettit
In situ photoreflectance study of the effects of sputter/annealing on the Fermi level at (001)n- and p-type GaAs surfaces
- X. Yin
- H.-M. Chen
- et al.
- 1991
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Observation of Franz-Keldysh oscillations in the stress-modulated spectra of (001) n-type GaAs
- Yichun Yin
- D. Yan
- et al.
- 1991
- Physical Review B
Correlation of interface chemistry, barrier height, and step density for Al on vicinal GaAs(100) surfaces
- S. Chang
- I.M. Vitomirov
- et al.
- 1991
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
IIIB-5 High-Transconductance InGaAs/InAlAs SISFET'S
- T.N. Jackson
- P. Solomon
- et al.
- 1991
- IEEE T-ED
Doping-Induced Bandwidth Enhancement in Metal-Semiconductor-Metal Photodetectors
- J.H. Burroughes
- D.L. Rogers
- et al.
- 1991
- IEEE Photonics Technology Letters
Crossover from tunneling to metallic behavior in superconductor- semiconductor contacts
- A.W. Kleinsasser
- T.N. Jackson
- et al.
- 1990
- Applied Physics Letters
Confirmation of the temperature-dependent photovoltaic effect on Fermi-level measurements by photoemission spectroscopy
- S. Chang
- I.M. Vitomirov
- et al.
- 1990
- Physical Review B
Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area
- E.A. Fitzgerald
- G.P. Watson
- et al.
- 1989
- Journal of Applied Physics
Superconducting InGaAs junction field-effect transistors with Nb electrodes
- A.W. Kleinsasser
- T.N. Jackson
- et al.
- 1989
- Applied Physics Letters