High-temperature SiO2 decomposition at the SiO2/Si interface
- R.M. Tromp
- G.W. Rubloff
- et al.
- 1985
- Physical Review Letters
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11 results for P. Balk
Strain relaxation in GeSi layers with uniform and graded composition
- S.C. Jain
- P. Balk
- et al.
- 1991
- ESSDERC 1991
Diffusion of Ion-Implanted Arsenic in Thermally Grown SiO2Films
- D.R. Young
- H. Kräutle
- et al.
- 2019
- JES
Polarization of thin phosphosilicate glass films in MGOS structures
- J.M. Eldridge
- R.B. Laibowitz
- et al.
- 2003
- Journal of Applied Physics
Strain relaxation in GeSi layers with uniform and graded composition
- S.C. Jain
- P. Balk
- et al.
- 1991
- Microelectronic Engineering
Summary Abstract: High temperature decomposition of SiO2at the Si/SiO2 interface
- G.W. Rubloff
- R.M. Tromp
- et al.
- 1986
- JVSTA
Charge Injection in MAOS Systems
- P. Balk
- F. Stephany
- 1971
- JES
Surface Properties of Oxidized Germanium-Doped Silicon
- P. Balk
- 1971
- JES
Phosphosilicate Glass Stabilization of FET Devices
- P. Balk
- J.M. Eldridge
- 1969
- Proceedings of the IEEE
Orientation Dependence of Built-in Surface Charge on Thermally Oxidized Silicon
- P. Balk
- P.J. Burkhardt
- et al.
- 1965
- Proceedings of the IEEE