Roughness analysis of Si/SiGe heterostructures
- R.M. Feenstra
- M.A. Lutz
- et al.
- 1995
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
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61 results for Frank Stern
Gated Hall effect measurements in high-mobility n-type Si/SiGe modulation-doped heterostructures
- K. Ismail
- M. Arafa
- et al.
- 1995
- Applied Physics Letters
Fabrication of three-terminal resonant tunneling devices in silicon-based material
- A. Zaslavsky
- K.R. Milkove
- et al.
- 1994
- Applied Physics Letters
Effect of nonequilibrium deep donors in heterostructure modeling
- Arvind Kumar
- Steven E. Laux
- et al.
- 1993
- Physical Review B
Carriers induced at the end of a quantum well
- Frank Stern
- Steven E. Laux
- 1992
- Journal of Applied Physics
Charge transfer and low-temperature electron mobility in a strained Si layer in relaxed Si1-xGex
- Frank Stern
- Steven E. Laux
- 1992
- Applied Physics Letters
Electron states in a GaAs quantum dot in a magnetic field
- Arvind Kumar
- Steven E. Laux
- et al.
- 1990
- Physical Review B
Channel sensitivity to gate roughness in a split-gate GaAs-AlGaAs heterostructure
- Arvind Kumar
- Steven E. Laux
- et al.
- 1989
- Applied Physics Letters
High-mobility variable-density two-dimensional electron gas in inverted GaAs-AlGaAs heterojunctions
- U. Meirav
- M. Heiblum
- et al.
- 1988
- Applied Physics Letters
Quasi-one-dimensional electron states in a split-gate GaAs/AlGaAs heterostructure
- S.E. Laux
- D.J. Frank
- et al.
- 1988
- Surface Science