Intersubband resonances in sosmos accumulation layers
- M.J. Uren
- T.N. Theis
- et al.
- 1983
- Solid State Communications
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67 results for F. Fang
Silicon-Rich SiO2 and Thermal SiO2 Dual Dielectric for Yield Improvement and High Capacitance
- Stefan K. C. Lai
- D.J. Dimaria
- et al.
- 1983
- IEEE T-ED
Effect of subband splitting on Si inversion layers
- A.A. Kastalsky
- F. Fang
- 1982
- Surface Science
Effect of biaxial stress on Si(100) inversion layers
- Frank F. Fang
- 1980
- Surface Science
Variation of the Shubnikov-de Haas amplitudes with ionic scattering in silicon inversion layers
- A. Hartstein
- F. Fang
- 1978
- Physical Review B
On the effective mass and collision time of (100) Si surface electrons
- F. Fang
- A.B. Fowler
- et al.
- 1978
- Surface Science
Effective mass and collision time of (100) Si surface electrons
- F. Fang
- A.B. Fowler
- et al.
- 1977
- Physical Review B
Effects of higher sub-band occupation in (100) Si inversion layers
- W.E. Howard
- F. Fang
- 1976
- Physical Review B
High Performance MOS Integrated Circuit Using the Ion Implantation Technique
- Frank F. Fang
- Hans S. Rupprecht
- 1975
- IEEE JSSC
Effects of a tilted magnetic field on a two-dimensional electron gas
- F. Fang
- P.J. Stiles
- 1968
- Physical Review