Electronic properties of heavily-doped n-type silicon
- A. Selloni
- S.T. Pantelides
- 1983
- Physica B+C
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100 results for Sokrates T. Pantelides
Multivacancies, interstitials, and self-interstitial migration in silicon
- S.T. Pantelides
- I. Ivanov
- et al.
- 1983
- Physica B+C
Electronic structure of deep sp-bonded substitutional impurities in silicon
- J. Bernholc
- N.O. Lipari
- et al.
- 1982
- Physical Review B
RECENT ADVANCES IN THE THEORY OF IMPURITIES AND DEFECTS IN SEMICONDUCTORS.
- S.T. Pantelides
- 1982
- International Symposium on Methods and Materials in Microelectronic Technology 1982
Electronic structure and spectra of heavily doped n-type silicon
- Annabella Selloni
- Sokrates T. Pantelides
- 1982
- Physical Review Letters
The electronic structure of impurities and defects in SiO2
- Sokrates T. Pantelides
- 1982
- Thin Solid Films
Identification and properties of defects in GaP
- M. Scheffler
- S.T. Pantelides
- et al.
- 1981
- Physical Review Letters
The electronic structure of deep SP-bonded acceptor impurities in semiconductors
- J. Bernholc
- S.T. Pantelides
- et al.
- 1981
- Solid State Communications
Scattering-theoretic method for defects in semiconductors. II. Self-consistent formulation and application to the vacancy in silicon
- J. Bernholc
- Nunzio O. Lipari
- et al.
- 1980
- Physical Review B
Electronic structure of the Ge-GaAs and Ge-ZnSe (100) interfaces
- J. Pollmann
- Sokrates T. Pantelides
- 1980
- Physical Review B