Energy-gap reduction in heavily doped silicon: Causes and consequences
- Sokrates T. Pantelides
- Annabella Selloni
- et al.
- 1985
- Solid-State Electronics
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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100 results for Sokrates T. Pantelides
Theory of electronically stimulated defect migration in semiconductors
- Sokrates T. Pantelides
- Atsushi Oshiyama
- et al.
- 1984
- Physical Review B
Electronic structure and identification of deep defects in GaP
- M. Scheffler
- J. Bernholc
- et al.
- 1984
- Physical Review B
Microscopic theory of atomic diffusion mechanisms in silicon
- R. Car
- P.J. Kelly
- et al.
- 1984
- Physica B+C
Electronic structure of self-interstitials and sp-bonded interstitial impurities in semiconductors
- J.P. Vigneron
- M. Scheffler
- et al.
- 1983
- Physica B+C
Multivacancies, interstitials, and self-interstitial migration in silicon
- S.T. Pantelides
- I. Ivanov
- et al.
- 1983
- Physica B+C
The properties of crystalline silicon under laser irradiation
- R. Car
- A. Selloni
- et al.
- 1983
- Physica B+C
Electronic properties of heavily-doped n-type silicon
- A. Selloni
- S.T. Pantelides
- 1983
- Physica B+C
Electronic structure of deep sp-bonded substitutional impurities in silicon
- J. Bernholc
- N.O. Lipari
- et al.
- 1982
- Physical Review B
The electronic structure of impurities and defects in SiO2
- Sokrates T. Pantelides
- 1982
- Thin Solid Films