Optimization of programming current on endurance of phase change memory
- Sangbum Kim
- Pei-Ying Du
- et al.
- 2012
- VLSI-TSA 2012
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123 results for Yu Zhu
Structure and electronic transport in graphene wrinkles
- Wenjuan Zhu
- Tony Low
- et al.
- 2012
- Nano Letters
Ultrathin strained-ge channel P-MOSFETs with high-k/metal gate and Sub-1-nm equivalent oxide thickness
- Pouya Hashemi
- Winston Chern
- et al.
- 2012
- IEEE Electron Device Letters
State-of-the-art graphene high-frequency electronics
- Yanqing Wu
- Keith A. Jenkins
- et al.
- 2012
- Nano Letters
Low band gap liquid-processed CZTSe solar cell with 10.1% efficiency
- Santanu Bag
- Oki Gunawan
- et al.
- 2012
- Energy and Environmental Science
Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy
- Martin J. Gajek
- J. Nowak
- et al.
- 2012
- Applied Physics Letters
Thickness dependence of the amorphous-cubic and cubic-hexagonal phase transition temperatures of GeSbTe thin films on silicon nitride
- H.K. Peng
- K. Cil
- et al.
- 2012
- Thin Solid Films
A high performance phase change memory with fast switching speed and high temperature retention by engineering the Ge xSb yTe z phase change material
- H.Y. Cheng
- T.H. Hsu
- et al.
- 2011
- IEDM 2011
Explore physical origins of resistance drift in phase change memory and its implication for drift-insensitive materials
- Jing Li
- Binquan Luan
- et al.
- 2011
- IEDM 2011
Racetrack memory cell array with integrated magnetic tunnel junction readout
- A. Annunziata
- M.C. Gaidis
- et al.
- 2011
- IEDM 2011