Performance comparisons of III-V and strained-Si in planar FETs and nonplanar FinFETs at ultrashort gate length (12 nm)
- Seung Hyun Park
- Yang Liu
- et al.
- 2012
- IEEE T-ED
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Betavoltaic performance of radiation-hardened high-efficiency Si space solar cells
- Ruqiang Bao
- Peter J. Brand
- et al.
- 2012
- IEEE T-ED
Effect of band-to-band tunneling on junctionless transistors
- Suresh Gundapaneni
- Mohit Bajaj
- et al.
- 2012
- IEEE T-ED
On the interpretation of ballistic injection velocity in deeply scaled MOSFETs
- Yang Liu
- Mathieu Luisier
- et al.
- 2012
- IEEE T-ED
On-off charge-voltage characteristics and dopant number fluctuation effects in junctionless double-gate MOSFETs
- Yuan Taur
- Han-Ping Chen
- et al.
- 2012
- IEEE T-ED
Self-annealing effect of tensile liner on thick-Tinv PMOS
- Qintao Zhang
- Jie Chen
- et al.
- 2011
- IEEE T-ED
Substrate gating of contact resistance in graphene transistors
- Dionisis Berdebes
- Tony Low
- et al.
- 2011
- IEEE T-ED
Scaling between channel mobility and interface state density in SiC MOSFETs
- John Rozen
- Ayayi C. Ahyi
- et al.
- 2011
- IEEE T-ED
Study of random dopant fluctuation effects in Germanium-source tunnel FETs
- Nattapol Damrongplasit
- Changhwan Shin
- et al.
- 2011
- IEEE T-ED
Compact modeling of partially depleted silicon-on-insulator drain-extended MOSFET (DEMOSFET) including high-voltage and floating-body effects
- Tarun Kumar Agarwal
- Amit Ranjan Trivedi
- et al.
- 2011
- IEEE T-ED