Defect formation caused by a transient decrease in the ambient oxygen concentration during growth of YBa2Cu3O 7-δ films
- A. Gupta
- B.W. Hussey
- et al.
- 1990
- Applied Physics Letters
Publications
2351 results at Applied Physics Letters
Bistable conditions for low-temperature silicon epitaxy
- Bernard S. Meyerson
- Franz J. Himpsel
- et al.
- 1990
- Applied Physics Letters
Internal stress and elasticity of synthetic diamond films
- B.S. Berry
- W.C. Pritchet
- et al.
- 1990
- Applied Physics Letters
Stretched exponential illumination time dependence of positive charge and spin generation in amorphous silicon nitride
- Jerzy Kanicki
- M. Sankaran
- et al.
- 1990
- Applied Physics Letters
Generation of 41 mW of blue radiation by frequency doubling of a GaAlAs diode laser
- W.J. Kozlovsky
- W. Lenth
- et al.
- 1990
- Applied Physics Letters
X-ray photoemission and Raman scattering spectroscopic study of surface modifications of silicon induced by electron cyclotron resonance etching
- A.S. Yapsir
- G.S. Oehrlein
- et al.
- 1990
- Applied Physics Letters
Electronic structure and dynamics of thin Ge/GaAs(110) heterostructures
- R. Haight
- J.A. Silberman
- 1990
- Applied Physics Letters
Photobleaching of light-induced paramagnetic defects in amorphous silicon nitride films
- M.S. Crowder
- E.D. Tober
- et al.
- 1990
- Applied Physics Letters
Temperature dependence of the electronic coherence of GaAs-GaAlAs superlattices
- E. Mendez
- F. Agulló-Rueda
- et al.
- 1990
- Applied Physics Letters
Radiative recombination in surface-free n+/n-/n +GaAs homostructures
- L.M. Smith
- D.J. Wolford
- et al.
- 1990
- Applied Physics Letters