Evidence for a negative electron-electron correlation energy in the dominant deep trapping center in silicon nitride films
- Sean E. Curry
- P. Lenahan
- et al.
- 1990
- Applied Physics Letters
Publications
2351 results at Applied Physics Letters
Direct overwriting capability in TM-rich side rare-earth transition metal amorphous films
- Shinji Takayama
- Teruhisa Shimizu
- et al.
- 1990
- Applied Physics Letters
Effect of high unintentional doping in AlGaAs barriers on scattering times in accumulation layers
- B. Laikhtman
- M. Heiblum
- et al.
- 1990
- Applied Physics Letters
Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy
- T.J. De Lyon
- J. Woodall
- et al.
- 1990
- Applied Physics Letters
Room-temperature oxidation of silicon catalyzed by Cu3Si
- J.M.E. Harper
- A. Charai
- et al.
- 1990
- Applied Physics Letters
Bias stress-induced instabilities in amorphous silicon nitride/hydrogenated amorphous silicon structures: Is the "carrier-induced defect creation" model correct?
- A. Gelatos
- Jerzy Kanicki
- 1990
- Applied Physics Letters
Fe/Fe-N multilayer films with low coercivity zero magnetostriction and high saturation magnetization
- K.K. Shih
- M.E. Re
- et al.
- 1990
- Applied Physics Letters
High-conductance customized copper interconnections produced by laser seeding and selective electrodeposition
- Arunava Gupta
- C. Julian Chen
- 1990
- Applied Physics Letters
Fractional states in few-electron systems
- W. Hansen
- T.P. Smith III
- et al.
- 1990
- Applied Physics Letters
Exponential thermal emission transients from DX centers in heavily Si-doped GaAs
- E. Calleja
- P.M. Mooney
- et al.
- 1990
- Applied Physics Letters