TA-A3 Retention Time Studies in Buried-Channel MOSFET Dynamic-Memory DevicesH.H. ChaoR.P. Havreluk1980IEEE T-ED
Effects of Impurity Compensation on Injection Current in Si Bipolar TransistorsD.D. TangAlwin E. Michel1980IEEE T-ED
Effect of Emitter Contact on Current Gain of Silicon Bipolar DevicesTak H. NingRandall D. Isaac1980IEEE T-ED
Efficiency Calculations for Thin-Film Polycrystalline Semiconductor p-n Junction Solar CellsConrad LanzaHarold J. Hovel1980IEEE T-ED
TP-A1 Fabrication and Properties of Ultrasmall Superconducting StructuresRobert B. LaibowitzRichard F. Vosset al.1980IEEE T-ED
TP-A3 Capless Annealing of GaAs Using a Controlled Excess as Vapor Pressure SourceH. RupprechtJ. Woodall1980IEEE T-ED
1 μm MOSFET VLSI Technology: Part Ill—Logic Circuit Design Methodology and ApplicationsPeter W. CookStanley E. Schusteret al.1979IEEE T-ED
Spatial Distribution of Wall Charge Density in AC Plasma Display PanelsOmesh SahniW.P. Jones1979IEEE T-ED