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Novel approach to reduce source/drain series resistance in high performance CMOS devices using self-aligned CoWP process for 45nm node UTSOI transistors with 20nm gate lengthJames PanAnna Topolet al.2006VLSI Technology 2006
Integration of local stress techniques with strained-Si directly on insulator (SSDOI) substratesHaizhou YinZ. Renet al.2006VLSI Technology 2006
Stress proximity technique for performance improvement with dual stress liner at 45nm technology and beyondX. ChenS. Fanget al.2006VLSI Technology 2006
Novel one-mask self-heating pillar phase change memoryT.D. HappM. Breitwischet al.2006VLSI Technology 2006
A new route to ultra-high density memory using the Micro to Nano Addressing Block (MNAB)R.S. ShenoyK. Gopalakrishnanet al.2006VLSI Technology 2006
Investigation of FinFET devices for 32nm technologies and beyondH. ShangL. Changet al.2006VLSI Technology 2006
Silicon-on-insulator MOSFETs with hybrid crystal orientationsM. YangK.K. Chanet al.2006VLSI Technology 2006