Investigation of FinFET devices for 32nm technologies and beyondH. ShangL. Changet al.2006VLSI Technology 2006
Band-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyondV. NarayananV.K. Paruchuriet al.2006VLSI Technology 2006
RTA-driven intra-die variations in stage delay, and parametric sensitivities for 65nm technologyI. AhsanN. Zamdmeret al.2006VLSI Technology 2006
A comparative study of NBTI and PBTI (Charge Trapping) in SiO 2/HfO2 stacks with FUSI, TiN, Re gatesS. ZafarY.-H. Kimet al.2006VLSI Technology 2006
Poly-Si/AlN/HfSiO stack for ideal threshold voltage and mobility in sub-100 nm MOSFETsK.-L. LeeM.M. Franket al.2006VLSI Technology 2006
A 45nm low cost low power platform by using integrated dual-stress-liner technologyJ. YuanS.S. Tanet al.2006VLSI Technology 2006
Silicon-on-insulator MOSFETs with hybrid crystal orientationsM. YangK.K. Chanet al.2006VLSI Technology 2006
Lower resistance scaled metal contacts to silicide for advanced CMOSA. TopolC. Sherawet al.2006VLSI Technology 2006
A new route to ultra-high density memory using the Micro to Nano Addressing Block (MNAB)R.S. ShenoyK. Gopalakrishnanet al.2006VLSI Technology 2006
Novel one-mask self-heating pillar phase change memoryT.D. HappM. Breitwischet al.2006VLSI Technology 2006