Evaluation of (110) versus (001) Channel Orientation for Improved nFET/pFET Device Performance Trade-Off in Gate-All-Around Nanosheet Technology
- Shogo Mochizuki
- Nicolas Loubet
- et al.
- 2023
- IEDM 2023
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11 results at IEDM 2023
In-Memory Compute Chips with Carbon-based Projected Phase-Change Memory Devices
- G.S. Syed
- K. Brew
- et al.
- 2023
- IEDM 2023
Cryogenic InGaAs HEMTs with Reduced On-resistance using Strained Ohmic Contacts
- 2023
- IEDM 2023
High Performance Nanosheet Technology Optimized for 77 K
- R. Bao
- L. Qin
- et al.
- 2023
- IEDM 2023
Scaling opportunities for Gate-All-Around: A patterning perspective
- I. Seshadri
- E. Miller
- et al.
- 2023
- IEDM 2023
Design of Analog-AI Hardware Accelerators for Transformer-based Language Models (Invited)
- Geoffrey Burr
- Sidney Tsai
- et al.
- 2023
- IEDM 2023
Reversing a decades-long scaling law of dielectric breakdown for ReRAM forming voltage reduction - Modeling competition among defect generation and annihilation processes
- Ernest Y Wu
- Takashi Ando
- et al.
- 2023
- IEDM 2023
Scaling opportunities for Gate-All-Around and beyond: A patterning perspective
- Indira Seshadri
- Eric Miller
- et al.
- 2023
- IEDM 2023
Silicon Device-Based Sensing for Sustainability
- Sufi Zafar
- Thomas Picunko
- et al.
- 2023
- IEDM 2023
Synapses, Circuits, and Architectures for Analog In-Memory Computing-Based Deep Neural Network Inference Hardware Acceleration
- 2023
- IEDM 2023