A high performance 90 nm SOI technology with 0.992 μm2 6T-SRAM cell
- Mukesh Khare
- S. Ku
- et al.
- 2002
- IEDM 2002
Bio
Allen Gabor is a Senior Technical Staff Member at IBM. He has worked in the field of lithography at Arch Chemicals, GlobalFoundries and IBM. This work has included photoresist development, CD control, overlay minimization and 193 dry, immersion and EUV insertion. He received his PhD (1996) in Materials Science and Engineering from Cornell University based on his work on block copolymer photoresists. He is the author of more than 50 journal papers and holder of over 30 patents. He currently serves on the program committee for SPIE Extreme Ultraviolet (EUV) Lithography Conference and is a senior member of SPIE.
Publications
Enabling the 70 nm technology node with 193 nm altPSM lithography
- Lars Liebmann
- Jennifer Lund
- et al.
- 2002
- Proceedings of SPIE-The International Society for Optical Engineering
Imaging polymers with supercritical carbon dioxide
- Christopher K. Ober
- Allen H. Gabor
- et al.
- 1997
- Advanced Materials
Patents
- US
- 11239077
- US
- 10242952
- US
- 10043760
- US
- 9859224
- US
- 9472506
- US
- 9046788
- US
- 8847416
- US
- 8673165
- US
- 8609322
- US
- 8592110
Top collaborators
NF
Nelson Felix
Director, Techinical Business Development - IBM Semiconductors
LM
Luciana Meli
Senior Manager: Patterning & Metrology
MB
Mary Breton
Technical Assistant to Huiming Bu | Semiconductor Enablement Program Management & Infrastructure