Conference paper
Reliability challenges with ultra-low k interlevel dielectrics
J.R. Lloyd, M. Lane, et al.
Microelectronics Reliability
The investigation of electromigration in Cu Damascene with bamboo-like grain structures, either capped with Ta/TaN, SiNx, SiC xNyHz, or without any cap, was presented. The Cu diffusion was reduced in the samples with SiNx or SiC xHyNz caps, at the top of Cu Damascene. For samples with a Ta/TaN cap, a remarkable improvement of Cu electromigration lifetime was observed.
J.R. Lloyd, M. Lane, et al.
Microelectronics Reliability
Y.-H. Kim, C. Cabral Jr., et al.
IEDM 2005
V. McGahay, G. Bonilla, et al.
IITC 2006
G.S. Cargill III, L.E. Moyer, et al.
International Workshop on Stress-Induced Phenomena in Metallization 2005