Conference paper
BEOL interconnects for 45 nm node and beyond
R.R. Yu, J. Doyle, et al.
VMIC 2005
A study was performed on the effect of liner thickness on electromigration lifetime. The measurement of electromigration lifetime, as a function of liner thickness for Cu/SiO2 interconnect structures was performed. Results showed a significant increase in mean lifetime for structures in which the liner thickness at the base of the test via was less than approximately 6 nm, with a current density<5mA/μm2 in the power line connected to the test via.
R.R. Yu, J. Doyle, et al.
VMIC 2005
X. Su, C.B. Stagarescu, et al.
Applied Physics Letters
Soon-Cheon Seo, C.-C. Yang, et al.
Electrochemical and Solid-State Letters
J.M.E. Harper, C. Cabral Jr., et al.
Journal of Applied Physics