C.-K. Hu, L. Gignac, et al.
Journal of Applied Physics
Electromigration in on-chip Cu interconnections with a selective electroless metal coating, CoWP, CoSnP, or Pd, on the top surface of Cu damascene lines has been investigated. The 10-20 nm thick metal cap significantly improves electromigration lifetime by providing protection against interface diffusion of Cu which has been the leading contributor to metal line failure by electromigration. © 2002 American Institute of Physics.
C.-K. Hu, L. Gignac, et al.
Journal of Applied Physics
R. Rosenberg, D. Edelstein, et al.
Annual Review of Materials Science
C.-K. Hu, K.P. Rodbell, et al.
IBM J. Res. Dev
C.-K. Hu, D. Canaperi, et al.
Thin Solid Films