Giuseppe Romano, Aakrati Jain, et al.
ECTC 2025
Exponentially increasing demand for die-to-die bandwidth has become the defining challenge of the chiplet era, driving innovations in both vertical and lateral interconnect technology. To scale beyond the practical limits of silicon interposers (>2,500 mm2), flagship products are adopting fan-out interposers with embedded bridge die, passives, and other components. M-Series Fan-Out Interposer Technology (MFIT) offers a compelling platform for large-scale chiplet integration, including HBM3e and UCIe Advanced. Maskless laser direct imaging (LDI) lithography enables large area RDLs without reticle stitching. A new Adaptive Patterning technique, Adaptive Pad Stacks, maintains a robust process window for die placement when scaling to fine pitches and dozens of embedded bridges, e.g. ± 40 μ m, ± 0.4° for 45 μ m pitch and ± 15 μ m, ± 0.1° for 25 μ m pitch. Signal integrity analyses performed for UCIe Advanced at up to 32 Gbps and HBM3e at up to 9.6 Gbps meet all requirements. Power integrity analyses show the benefits of thick copper planes in embedded RDL bridges and on the fan-out interposer itself for demanding power distribution networks (PDNs) like HBM3e. Strategically placed embedded silicon capacitors enabled meeting PDN specifications without TSVs in the bridge die. Moreover, the re-usable RDL bridge designs simplify and speed-up product development.
Giuseppe Romano, Aakrati Jain, et al.
ECTC 2025
Keiji Matsumoto, Daisuke Oshima, et al.
ECTC 2025
Prabudhya Roy Chowdhury, Aakrati Jain, et al.
ECTC 2025
Minhua Lu, Joyce Liu, et al.
ECTC 2025