A. Deutsch, G.V. Kopcsay, et al.
ECTC 1997
The self-heating of strained-silicon MOSFETs is demonstrated experimentally. Output characteristics measured by a pulse technique, in which self-heating is absent, show as much as 15% greater drain current (for 15% Ge content) than the corresponding static measurements. Comparison of the current measured this way with the static measurements allows an estimate of the channel temperature during the static operation. The temperature rise is compared to a simple estimate of the thermal resistance of the FET.
A. Deutsch, G.V. Kopcsay, et al.
ECTC 1997
Keith A. Jenkins, A.P. Jose, et al.
ICICDT 2008
Keith A. Jenkins, R. Puri, et al.
IEEE International SOI Conference 2001
C. Wann, L. Su, et al.
ISSCC 1998