R. Hammer, N.J. Chou, et al.
Journal of Electronic Materials
We have used x-ray photoelectron spectroscopy and multiple internal reflection infrared spectroscopy to study the etching of polysiloxane films in an rf oxygen plasma. The results indicate that a structurally strained SiO 2 layer, ∼1 nm thick, is formed on the film exposed to oxygen plasma. For a given rf power input this oxidized overlayer recedes with the etching front in a steady state fashion, acting as a protective layer for the underlying polysiloxane film. The etching mechanism is effectively a combination of two competitive processes, namely, ion sputtering and oxidation.
R. Hammer, N.J. Chou, et al.
Journal of Electronic Materials
N.J. Chou
Journal of Electronic Materials
E. Babich, J. Paraszczak, et al.
ACS National Meeting 1989
J. Paraszczak, E. Babich, et al.
Proceedings of SPIE 1989