N.J. Chou, Joseph A. Aboaf, et al.
IEEE T-ED
We have used x-ray photoelectron spectroscopy and multiple internal reflection infrared spectroscopy to study the etching of polysiloxane films in an rf oxygen plasma. The results indicate that a structurally strained SiO 2 layer, ∼1 nm thick, is formed on the film exposed to oxygen plasma. For a given rf power input this oxidized overlayer recedes with the etching front in a steady state fashion, acting as a protective layer for the underlying polysiloxane film. The etching mechanism is effectively a combination of two competitive processes, namely, ion sputtering and oxidation.
N.J. Chou, Joseph A. Aboaf, et al.
IEEE T-ED
N.J. Chou, J.M. Eldridge, et al.
Journal of Electronic Materials
J. Paraszczak, J.M. Shaw, et al.
Microlithography 1983
N.J. Chou, D.W. Dong, et al.
JES