O. Bisi, K.N. Tu
Physical Review Letters
Alloy films of NiPt were e-beam codeposited on n-type Si and annealed up to 700°C in a purified- He ambient furnace. Silicide formation was monitored using MeV4 He Rutherford backscattering and glancing-angle x-ray diffraction. At low temperatures (300-350°C), Ni segregates at the Si/ silicide interface and the first phases detected are NiSi and PtSi. At intermediate temperatures (400-500°C), there is further accumulation of Ni at the Si/silicide interface, and at later stages an incursion of Pt to the interface. The barrier height increase reflects the presence of Pt. At 700°C, the Ni and Pt redistribute to form a uniform ternary.
O. Bisi, K.N. Tu
Physical Review Letters
Albert T. Wu, J.R. Lloyd, et al.
APM 2005
Ronald R. Petkie, K.N. Tu, et al.
Journal of Electronic Materials
F. Nava, T. Tien, et al.
Journal of Applied Physics