Mark W. Dowley
Solid State Communications
The utility of near-edge x-ray absorption fine structure (NEXAFS) for providing detailed chemical information about lithographic interfaces, by focusing initially on the T-topping/closure issue and probing the surface and bulk composition of the photo-acid generator in a model resist formulation was demonstrated. In addition, the extent of deprotection at the resist surface was also studied as a function of postexposure bake time using NEXAFS. The resultant data were analyzed in detail.
Mark W. Dowley
Solid State Communications
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
J.A. Barker, D. Henderson, et al.
Molecular Physics
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry