R. Ghez, M.B. Small
JES
The utility of near-edge x-ray absorption fine structure (NEXAFS) for providing detailed chemical information about lithographic interfaces, by focusing initially on the T-topping/closure issue and probing the surface and bulk composition of the photo-acid generator in a model resist formulation was demonstrated. In addition, the extent of deprotection at the resist surface was also studied as a function of postexposure bake time using NEXAFS. The resultant data were analyzed in detail.
R. Ghez, M.B. Small
JES
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
Ellen J. Yoffa, David Adler
Physical Review B
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics