Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
Paper
R.F. diode sputtering
Abstract
A review of r.f. sputtering principles is presented with reference to recent plasma models and sample calculations. Typical modern sputtering equipment is described and methods of measurement of important process variables. Application to the sputtering of SiO2 is described, with data on film properties as a function of bias, rate and oxygen additions. © 1990.
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