J.A. Barker, D. Henderson, et al.
Molecular Physics
Electrostatic discharge (ESD) performance of a shallow-trench-isolation double-diode protection circuit in CMOS technology is discussed. This paper highlights the sensitivities of these devices to semiconductor process parameters, interaction with chip circuitry and advanced failure analysis techniques. © 1993.
J.A. Barker, D. Henderson, et al.
Molecular Physics
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron