Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Electrostatic discharge (ESD) performance of a shallow-trench-isolation double-diode protection circuit in CMOS technology is discussed. This paper highlights the sensitivities of these devices to semiconductor process parameters, interaction with chip circuitry and advanced failure analysis techniques. © 1993.
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
Ellen J. Yoffa, David Adler
Physical Review B
Eloisa Bentivegna
Big Data 2022