F.M. D'Heurle
MRS Fall Meeting 1995
The evolution of stress in silicide/polycrystalline Si (poly-Si) layered structures has been monitored in situ in the temperature range of 25-700°C. At elevated temperatures, the silicide/poly-Si structure becomes morphologically unstable. The grain growth of poly-Si leads to an inversion of the positions of the two layers. The in situ stress measurement shows that this structural degradation is accompanied by a substantial increase in tensile stress of around 0.4 GPa, for NiSi, Pd2Si, and PtSi. A simple calculation indicates that the magnitude of the stress increase can be accounted for, at least to a large extend, by the volume contraction caused by the grain growth of poly-Si.
F.M. D'Heurle
MRS Fall Meeting 1995
C.-K. Hu, K.Y. Lee, et al.
MRS Spring Meeting 1998
M. Paunovic, L. Clevenger, et al.
JES
C. Lavoie, C. Cabral Jr., et al.
Journal of Electronic Materials