L. Gignac, M. Kawasaki, et al.
Journal of Applied Physics
The low-loss electron (LLE) image in the scanning electron microscope (SEM) is applied to samples that are right angles to the beam with a view to applications in the semiconductor metrology, inspection and review areas. Image is obtained by collecting electrons from a specimen in the forward direction with 100 to 500 eV energy loss.
L. Gignac, M. Kawasaki, et al.
Journal of Applied Physics
N.G. Ainslie, F.M. D'Heurle, et al.
Applied Physics Letters
L. Gignac, S.H. Boettcher, et al.
M&M 2006
O.C. Wells
Scanning