PaperDistribution of boron-induced defects in shallow diffused surface layers of siliconH. Rupprecht, G.H. SchwuttkeJournal of Applied Physics
PaperContinuous Stimulated Emission from GaAs Diodes at 77°KM.H. Pilkuhn, H. Rupprecht, et al.Proceedings of the IEEE
PaperA Relation Between the Current Density at Threshold and the Length of Fabry-Perot Type GaAs LasersM.H. Pilkuhn, H. RupprechtProceedings of the IEEE
PaperElectroluminescence near band gap in gallium phosphide containing shallow donor and acceptor levelsL.M. Foster, M.H. PilkuhnApplied Physics Letters
