PaperIVA-7 Surface Layer Impurity Accumulation Due to Evaporation of GaAs During AnnealingJ. Woodall, H. Rupprecht, et al.IEEE T-ED
PaperElectron microscope studies of an alloyed Au/Ni/Au-Ge ohmic contact to GaAsT.S. Kuan, P.E. Batson, et al.Journal of Applied Physics
PaperElectroluminescence near band gap in gallium phosphide containing shallow donor and acceptor levelsL.M. Foster, M.H. PilkuhnApplied Physics Letters
PaperSelf-induced oscillations in the stimulated light emission from GaAs injection lasersR.S. Levitt, M.H. PilkuhnJournal of Applied Physics
