Advanced 3D Monolithic hybrid CMOS with Sub-50 nm gate inverters featuring replacement metal gate (RMG)-InGaAs nFETs on SiGe-OI Fin pFETs
- Veeresh Deshpande
- V. Djara
- et al.
- 2015
- IEDM 2015
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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18 results for V. Djara
CMOS-compatible replacement metal gate InGaAs-OI FinFET With ION=156μA/μm at VDD= 0.5V and IOFF=100nA/μm
- V. Djara
- Veeresh Deshpande
- et al.
- 2016
- IEEE Electron Device Letters
Material and device integration for hybrid III-V/SiGe CMOS technology
- Veeresh Deshpande
- V. Djara
- et al.
- 2015
- ECS Meeting 2015 Phoenix
Hybrid InGaAs/SiGe CMOS circuits with 2D and 3D monolithic integration
- Veeresh Deshpande
- Herwig Hahn
- et al.
- 2017
- ESSDERC 2017
First demonstration of InGaAs/SiGe CMOS inverters and dense SRAM arrays on Si using selective epitaxy and standard FEOL processes
- Lukas Czornomaz
- V. Djara
- et al.
- 2016
- VLSI Technology 2016
Theoretical and experimental analysis of capacitance and mobility in InGaAs
- F.M. Bufler
- M. Frey
- et al.
- 2016
- DRC 2016
First RF characterization of InGaAs replacement metal gate (RMG) nFETs on SiGe-OI FinFETs fabricated by 3D monolithic integration
- Veeresh Deshpande
- V. Djara
- et al.
- 2016
- EUROSOI-ULIS 2016
Fabrication and characterization of InGaAs-on-insulator lateral N+/n/N+ structures
- Lukas Czornomaz
- V. Djara
- et al.
- 2016
- EUROSOI-ULIS 2016
Hybrid III-V/SiGe technology: Improved n-FET performance and CMOS inverter characteristics
- Lukas Czornomaz
- Nicolas Daix
- et al.
- 2014
- SNW 2014
Confined Epitaxial Lateral Overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates
- Lukas Czornomaz
- Emanuele Uccelli
- et al.
- 2015
- VLSI Technology 2015