PaperTime-of-flight measurements of minority-carrier transport in p-siliconD.D. Tang, F. Fang, et al.Applied Physics Letters
Conference paperA full E-beam 0.25 mu m bipolar technology with sub-25 ps ECL gate delayJ. Warnock, J.D. Cressler, et al.IEDM 1991
PaperEffects of Impurity Compensation on Injection Current in Si Bipolar TransistorsD.D. Tang, Alwin E. MichelIEEE T-ED
Conference paperLow-temperature operation of silicon bipolar ECL circuitsJ.D. Cressler, D.D. Tang, et al.ISSCC 1989