Near-ir absorption in chemically vapor deposited a-SiNx:H films
- C.H. Seager
- Jerzy Kanicki
- 1992
- Physical Review B
Publications
This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.
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60 results for Jerzy Kanicki
Some electrical properties of amorphous silicon/amorphous silicon nitride interfaces: Top nitride and bottom nitride configurations in MNS and TFT devices
- C. Godet
- Jerzy Kanicki
- et al.
- 1992
- Journal of Applied Physics
Investigations on the quality of polysilicon film-gate dielectric interface in polysilicon thin film transistors
- Ji-Ho Kung
- Miltiadis K. Hatalis
- et al.
- 1992
- Thin Solid Films
Enhanced electro-optic effect in amorphous hydrogenated silicon based waveguides
- M. Zelikson
- J. Salzman
- et al.
- 1992
- Applied Physics Letters
Charge trapping centers in N-rich silicon nitride thin films
- W.L. Warren
- Jerzy Kanicki
- et al.
- 1992
- Applied Physics Letters
VA-3 Hydrogenation Effects on Polysilicon Thin-Film Transistor Structures
- M.K. Hatalis
- J.A. Kung
- et al.
- 1992
- IEEE T-ED
Thermal annealing of light-induced metastable defects in hydrogenated amorphous silicon nitride
- E.D. Tober
- Jerzy Kanicki
- et al.
- 1991
- Applied Physics Letters
Electrically neutral nitrogen dangling-bond defects in amorphous hydrogenated silicon nitride thin films
- W.L. Warren
- P. Lenahan
- et al.
- 1991
- Journal of Applied Physics
Low-temperature electron spin resonance investigations of silicon paramagnetic defects in silicon nitride
- W.L. Warren
- F.C. Rong
- et al.
- 1991
- Applied Physics Letters
Energy level of the nitrogen dangling bond in amorphous silicon nitride
- W.L. Warren
- Jerzy Kanicki
- et al.
- 1991
- Applied Physics Letters