Schottky barrier heights of epitaxial Ni-silicides on Si(111)
- M. Liehr
- P.E. Schmid
- et al.
- 1986
- JVSTA
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111 results for F.K. LeGoues
Summary Abstract: High temperature decomposition of SiO2at the Si/SiO2 interface
- G.W. Rubloff
- R.M. Tromp
- et al.
- 1986
- JVSTA
Critique of "atom probe field ion microscopy of the decomposition of Cu-2.7 A/O Co"
- F.K. LeGoues
- T.L. McDevitt
- et al.
- 1986
- Scripta Metallurgica
Stacking faults in WSi2: Resistivity effects
- F.M. d'Heurle
- F.K. LeGoues
- et al.
- 1986
- Applied Physics Letters
Atomic structure of the epitaxial Al–Si interface
- F. Legoues
- W. Krakow
- et al.
- 1986
- Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Interdiffusion and precipitation in Al‒Hf thin-film couples
- M. Wittmer
- F. Legoues
- et al.
- 1986
- Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
NiSi mixing: A new model for low temperature silicide formation
- E.J. Van Loenen
- J.F. Van Der Veen
- et al.
- 1985
- Surface Science
High resolution studies of NiSi2 ultrathin film formation by ion scattering and cross-section tem
- E.J. Van Loenen
- A.E.M.J. Fischer
- et al.
- 1985
- Surface Science
Chemical reactions at Pt/oxide/Si and Ti/oxide/Si interfaces
- M. Liehr
- F.K. LeGoues
- et al.
- 1985
- JVSTA
Chemical bonding and reaction at metal/polymer interfaces
- P.S. Ho
- P.O. Hahn
- et al.
- 1985
- JVSTA