In situ TEM study of the growth of Ge on Si(111)
- F.K. LeGoues
- M. Hammar
- et al.
- 1996
- Surface Science
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111 results for F.K. LeGoues
In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth I. Si(001)/Ge
- M. Hammar
- F.K. LeGoues
- et al.
- 1996
- Surface Science
Strain relaxation in ultrathin epitaxial films of β-FeSi2 on unstrained and strained Si(100) surfaces
- D.R. Peale
- R. Haight
- et al.
- 1995
- Thin Solid Films
Roughness analysis of Si/SiGe heterostructures
- R.M. Feenstra
- M.A. Lutz
- et al.
- 1995
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Strain relief during growth: CaF2 on Si(111)
- R.M. Tromp
- F. Legoues
- et al.
- 1995
- Physical Review Letters
Evolution of strain relaxation in step-graded SiGe/Si structures
- P.M. Mooney
- J.L. Jordan-Sweet
- et al.
- 1995
- Applied Physics Letters
Relaxation mechanism of Ge islands/Si(001) at low temperature
- F. Legoues
- J. Tersoff
- et al.
- 1995
- Applied Physics Letters
Influence of misfit dislocations on the surface morphology of Si1-xGex films
- M.A. Lutz
- R.M. Feenstra
- et al.
- 1995
- Applied Physics Letters
Relaxed Si0.7Ge0.3 buffer layers for high-mobility devices
- P.M. Mooney
- J.L. Jordan-Sweet
- et al.
- 1995
- Applied Physics Letters
Near band-edge photoluminescence in relaxed Si1-xGex layers
- L. Tilly
- P.M. Mooney
- et al.
- 1995
- Applied Physics Letters