Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures
- K. Ismail
- F. Legoues
- et al.
- 1994
- Physical Review Letters
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111 results for F.K. LeGoues
UHVCVD growth of Si/SiGe heterostructures and their applications
- B.S. Meyerson
- K. Ismail
- et al.
- 1994
- Semiconductor Science and Technology
New approach to the growth of low dislocation relaxed SiGe material
- A.R. Powell
- Subramanian S. Iyer
- et al.
- 1994
- Applied Physics Letters
Strain symmetrization effects in pseudomorphic Si1-yC y/Si1-xGex superlattices
- K. Eberl
- Subramanian S. Iyer
- et al.
- 1994
- Applied Physics Letters
Nucleation of dislocations in SiGe layers grown on (001)Si
- P.M. Mooney
- F.K. LeGoues
- et al.
- 1994
- Journal of Applied Physics
Relaxation of SiGe thin films grown on Si/SiO2 substrates
- F. Legoues
- A.R. Powell
- et al.
- 1994
- Journal of Applied Physics
Dislocation nucleation barrier in SiGe/Si structures graded to pure Ge
- P.M. Mooney
- F. Legoues
- et al.
- 1994
- Applied Physics Letters
Origin of mosaic structure in relaxed Si1-xGex layers
- P.M. Mooney
- F.K. LeGoues
- et al.
- 1993
- ICDS 1993
Cyclic growth of strain-relaxed islands
- F.K. LeGoues
- M.C. Reuter
- et al.
- 1994
- Physical Review Letters
LeGoues, Mooney, and Tersoff reply [2]
- F.K. LeGoues
- P.M. Mooney
- et al.
- 1994
- Physical Review Letters