The microstructure of high-critical current superconducting films
- P. Chaudhari
- F.K. LeGoues
- et al.
- 1987
- Science
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111 results for F.K. LeGoues
High-temperature SiO2 decomposition at the SiO2/Si interface
- R.M. Tromp
- G.W. Rubloff
- et al.
- 1985
- Physical Review Letters
Correlation of Schottky-barrier height and microstructure in the epitaxial Ni silicide on Si(111)
- M. Liehr
- P.E. Schmid
- et al.
- 1985
- Physical Review Letters
Erbium-doped silicon prepared by UHV/CVD
- D.B. Beach
- R.T. Collins
- et al.
- 1992
- MRS Proceedings 1992
Photoluminescence from pseudomorphically strained Si/Si1-xGex multiple quantum wells grown on silicon
- Stefan Zollner
- R.T. Collins
- et al.
- 1992
- SPIE Semiconductors 1992
Dopant diffusion in silicides: Effect of diffusion paths
- Carol Stanis
- J.M. Cotte
- et al.
- 1992
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
EPI active devices
- G.L. Patton
- B.S. Meyerson
- et al.
- 1990
- Silicon Materials Science and Technology 1990
NEW TECHNIQUE FOR FAILURE ANALYSIS: CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY OF DEVICES.
- F.K. LeGoues
- P.S. Ho
- 1985
- VMIC 1985
The Microstructure of Transition Metal/Al(Cu) Layers
- H.-C.W. Huang
- M. Wittmer
- et al.
- 2019
- JES
Microstructure of epitaxial Ag/Si(111) and Ag/Si(100) interfaces
- F. Legoues
- M. Liehr
- et al.
- 2006
- Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties