Epi-GaAs surface treatment - impact of mixed phases on device performance
- Alan C. Warren
- J. Woodall
- 1989
- ECS Meeting 1989
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31 results for Alan C. Warren
Oxide Passivation of Photochemically Unpinned GaAs
- C.W. Wilmsen
- Alan C. Warren
- et al.
- 2019
- JES
Si diffusion and segregation in low-temperature grown GaAs
- K.L. Kavanagh
- J.C.P. Chang
- et al.
- 1993
- Applied Physics Letters
Photoemission spectroscopy of Al0.27Ga0.73As:As photodiodes
- D.T. McInturff
- J. Woodall
- et al.
- 1993
- Applied Physics Letters
Comment on arsenic precipitate coarsening in GaAs epilayers
- M.R. Melloch
- K. Mahalingam
- et al.
- 1993
- Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Photoemission spectroscopy of GaAs:As photodiodes
- D.T. McInturff
- J. Woodall
- et al.
- 1992
- Applied Physics Letters
Arsenic cluster dynamics in doped GaAs
- M.R. Melloch
- N. Otsuka
- et al.
- 1992
- Journal of Applied Physics
Role of excess as in low-temperature-grown GaAs
- Alan C. Warren
- J. Woodall
- et al.
- 1992
- Physical Review B
Formation of two-dimensional arsenic-precipitate arrays in GaAs
- M.R. Melloch
- N. Otsuka
- et al.
- 1992
- Applied Physics Letters
Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers
- Alan C. Warren
- N. Katzenellenbogen
- et al.
- 1991
- Applied Physics Letters