SPIRIT - A bipolar/BiCMOS isolation technology for high-performance VLSI
- J.N. Burghartz
- A.O. Cifuentes
- et al.
- 1993
- VLSI Technology 1993
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67 results for J.N. Burghartz
An ultra-low thermal-budget SiGe-base bipolar technology
- J.N. Burghartz
- D.A. Grützmacher
- et al.
- 1993
- VLSI Technology 1993
Reliability Imposed Design Aspects of Submicrometer Polysilicon-Emitter Bipolar Transistors
- Joachim N. Burghartz
- Yuh-Jier Mii
- 1993
- IEEE Electron Device Letters
A high performance epitaxial SiGe-base ECL BiCMOS technology
- D.L. Harame
- E.F. Crabbe
- et al.
- 1992
- IEDM 1992
Novel bipolar transistor isolation structure using combined selective epitaxial growth and planarization technique
- J.N. Burghartz
- J. Wamock
- et al.
- 1992
- ESSDERC 1992
Identification Of Perimeter Depletion And Emitter Plug Effects In Deep-Submicrometer, Shallow-Junction Polysilicon Emitter Bipolar Transistors
- Joachim N. Burghartz
- Jack Yuan-Chen Sun
- et al.
- 1992
- IEEE T-ED
A Scaled 0.25- μm Bipolar Technology Using Full e-Beam Lithography
- John D. Cressler
- James Warnock
- et al.
- 1992
- IEEE Electron Device Letters
Partial-SOI Isolation Structure for Reduced Bipolar Transistor Parasitics
- Joachim N. Burghartz
- John D. Cressler
- et al.
- 1992
- IEEE Electron Device Letters
A full E-beam 0.25 mu m bipolar technology with sub-25 ps ECL gate delay
- J. Warnock
- J.D. Cressler
- et al.
- 1991
- IEDM 1991
Single crystal emitter gap for epitaxial Si- and SiGe-base transistors
- J.H. Comfort
- E.F. Crabbe
- et al.
- 1991
- IEDM 1991