Plasma abatement reduces PFC emission
- Victor Vartanian
- Laurie Beu
- et al.
- 2000
- Semiconductor International
Publications
Date
Featured collections
Popular topics
12 results for T. Lii
Experimental High Performance Sub-0.1 μm Channel nMOSFET's
- Y. Mii
- S. Rishton
- et al.
- 1994
- IEEE Electron Device Letters
A Novel Borderless Contact/Interconnect Technology Using Aluminum Oxide Etch Stop for High Performance SRAM and Logic
- S. Subbanna
- D.L. Harame
- et al.
- 1993
- IEDM 1993
The design, fabrication and characterization of 0.15 μm MOS devices
- H.I. Hanafi
- P. Coane
- et al.
- 1993
- ESSDERC 1993
170 nm gates fabricated by phase-shift mask and top anti-reflector process
- T.A. Brunner
- P.N. Sanda
- et al.
- 1993
- Microlithography 1993
High performance 0.1μm nMOSFET's with 10 ps/stage delay (85 K) at 1.5 V power supply
- Y. Mii
- S. Rishton
- et al.
- 1993
- VLSI Technology 1993
A high performance 0.15 μm CMOS
- G. Shahidi
- J. Warnock
- et al.
- 1993
- VLSI Technology 1993
A room temperature 0.1 μm CMOS on SOI
- G. Shahidi
- C. Blair
- et al.
- 1993
- VLSI Technology 1993
Experimental 0.1-um p-Channel MOSFET with p+-Polysilicon Gate on 35-A Gate Oxide
- Yuan Taur
- S. Cohen
- et al.
- 1993
- IEEE Electron Device Letters
High transconductance 0.1 μ m pMOSFET
- Y. Taur
- S. Cohen
- et al.
- 1992
- IEDM 1992