E' centers and nitrogen-related defects in SiO2 films
- J.H. Stathis
- J. Chapple-Sokol
- et al.
- 1990
- Applied Physics Letters
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169 results for Jim Stathis
Trapped positive charge in plasma-enhanced chemical vapor deposited silicon dioxide films
- D.A. Buchanan
- J.H. Stathis
- et al.
- 1990
- Applied Physics Letters
Observation of multiple silicon dangling bond configurations in silicon nitride
- D. Jousse
- Jerzy Kanicki
- et al.
- 1989
- Applied Physics Letters
Analysis of the superhyperfine structure and the g tensor of defects in amorphous silicon
- 1989
- Physical Review B
Electron spin resonance study of metal-nitride-silicon structures: Observation of Si dangling bonds with different configurations and trapping properties in silicon nitride
- D. Jousse
- Jerzy Kanicki
- et al.
- 1989
- Applied Surface Science
Deep trench structures in silicon for sensitivity enhancement of Si/SiO2 interface studies
- J.H. Stathis
- E. Bassous
- et al.
- 1988
- Applied Physics Letters
Neutral E' centers in microwave downstream plasma-enhanced chemical-vapor-deposited silicon dioxide
- W.L. Warren
- P. Lenahan
- et al.
- 1988
- Applied Physics Letters
Quantitative analysis of EPR and electron-nuclear double resonance spectra of D centers in amorphous silicon: Dangling versus floating bonds
- J.H. Stathis
- S.T. Pantelides
- 1988
- Physical Review B
Time-resolved photoluminescence in amorphous silicon dioxide
- J.H. Stathis
- M.A. Kastner
- 1987
- Physical Review B