80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax
- S.J. Koester
- K.L. Saenger
- et al.
- 2003
- Electronics Letters
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15 results for James Tornello
Electrochemical process for advanced package fabrication
- S. Krongelb
- L. Romankiw
- et al.
- 1998
- IBM J. Res. Dev
Moderate-temperature anneal of 7-nm thermal SiO2 in O 2- and H2O-free atmosphere: Effects on Si-SiO2 interface-trap distribution
- L. Dori
- J.H. Stathis
- et al.
- 1991
- Journal of Applied Physics
Thin-oxide dual-electron-injector annealing studies using conductivity and electron energy-loss spectroscopy
- L. Dori
- J. Bruley
- et al.
- 1991
- Journal of Applied Physics
A metal-oxide-semiconductor field-effect transistor with a 20-nm channel length
- A. Hartstein
- N.F. Albert
- et al.
- 1990
- Journal of Applied Physics