Dislocation-free strained silicon-on-silicon by in-place bonding
- G.M. Cohen
- P.M. Mooney
- et al.
- 2005
- Applied Physics Letters
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59 results for Guy Cohen
Elastic strain relaxation in free-standing SiGe/Si structures
- P.M. Mooney
- G.M. Cohen
- et al.
- 2004
- Applied Physics Letters
Two gates are better than one
- P. Solomon
- K.W. Guarini
- et al.
- 2003
- IEEE Circuits and Devices Magazine
High-resolution x-ray diffraction for characterization and monitoring of silicon-on-insulator fabrication processes
- G.M. Cohen
- P.M. Mooney
- et al.
- 2002
- Journal of Applied Physics
Optical constants of In 0.53Ga 0.47As/InP: Experiment and modeling
- Martín Muñoz
- Todd M. Holden
- et al.
- 2002
- Journal of Applied Physics
Burstein-Moss shift of n-doped (formula presented)
- Martín Muñoz
- Fred H. Pollak
- et al.
- 2001
- Physical Review B - CMMP
Burstein-Moss shift of n-doped In0.53Ga0.47As/inp
- Martín Muñoz
- Fred H. Pollak
- et al.
- 2001
- Physical Review B - CMMP
Triple-self-aligned, planar double-gate MOSFETs: Devices and circuits
- K.W. Guarini
- P. Solomon
- et al.
- 2001
- Technical Digest-International Electron Devices Meeting
Characterization of the silicon on insulator film in bonded wafers by high resolution X-ray diffraction
- G.M. Cohen
- P.M. Mooney
- et al.
- 1999
- Applied Physics Letters