Decomposition mechanisms of SiHx species on Si(100)-(2×1) for x=2, 3, and 4
- S. Gates
- C.M. Greenlief
- et al.
- 1990
- The Journal of Chemical Physics
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72 results for Stephen M. Gates
Surface reactions in Si chemical vapor deposition from silane
- S.K. Kuikarni
- H.H. Sawin
- 1990
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Absolute coverage and decomposition kinetics of Mono-, Di-, and tri-hydride phases on Si(111)-(7×7)
- C.M. Greenlief
- S. Gates
- et al.
- 1989
- Chemical Physics Letters
Interaction of Si2H6 with a Si(111)-77 surface
- R. Imbihl
- J.E. Demuth
- et al.
- 1989
- Physical Review B
Reactive sticking coefficient of silane on the Si(111)-(7×7) Surface
- S. Gates
- C.M. Greenlief
- et al.
- 1989
- Chemical Physics Letters
Silicon hydride etch products from the reaction of atomic hydrogen with Si(100)
- Stephen M. Gates
- Roderick R. Kunz
- et al.
- 1989
- Surface Science
Reaction kinetics of surface silicon hydrides
- C. Michael Greenlief
- Stephen M. Gates
- et al.
- 1989
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Adsorption kinetics of SiH4, Si2H6 and Si3H8 on the Si(111)-(7×7) surface
- Stephen M. Gates
- 1988
- Surface Science
Summary Abstract’ Integrated system for studies of thln-film chemical growth processes on silicon wafers
- M. Liehr
- S. Gates
- et al.
- 1987
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Summary Abstract: Chernisorption of silanes on the Si(111)-(7x7) surface
- S. Gates
- B.A. Scott
- et al.
- 1987
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films