Investigation of kink-induced excess RF channel noise in sub -50 nm PD-SOI MOSFETs
- Ninad S. Wadje
- Vijaya Bhaskara Neeli
- et al.
- 2010
- IEEE International SOI Conference 2010
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20 results for Hasan M Nayfeh
Yield monitor for embedded-SiGe process optimization
- Xu Ouyang
- Shwu-Jen Jeng
- et al.
- 2008
- ICSICT 2008
Channel strain engineering for high performance CMOS technology
- 2008
- RTP 2008
Hole transport in nanoscale p-type MOSFET SOI devices with high strain
- H. Nayfeh
- S.-J. Jeng
- et al.
- 2007
- DRC 2007
Effect of contact liner stress in high-performance FDSOI devices with ultra-thin silicon channels and 30 nm gate lengths
- D. Singh
- J. Hergenrother
- et al.
- 2005
- IEEE International SOI Conference 2005
Demonstration of quantum volume 64 on a superconducting quantum computing system
- Petar Jurcevic
- Ali Javadi-Abhari
- et al.
- 2021
- Quantum Science and Technology
Trade-offs between RF performance and total-dose tolerance in 45-nm RF-CMOS
- Rajan Arora
- En Xia Zhang
- et al.
- 2011
- IEEE TNS
Evaluating the influence of various body-contacting schemes on single event transients in 45-nm SOI CMOS
- Kurt A. Moen
- Stanley D. Phillips
- et al.
- 2010
- IEEE TNS
Impact of lateral asymmetric channel doping on 45-nm-technology N-Type SOI MOSFETs
- Hasan M. Nayfeh
- Nivo Rovedo
- et al.
- 2009
- IEEE Transactions on Electron Devices
Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs
- Guangrui Xia
- Hasan M. Nayfeh
- et al.
- 2004
- IEEE Transactions on Electron Devices