Publications

232 results for Jerry Tersoff

Relaxation mechanism of Ge islands/Si(001) at low temperature
- - F. Legoues
  - J. Tersoff
  - et al.
- 1995
- Applied Physics Letters
Nucleation of dislocations in SiGe layers grown on (001)Si
- - P.M. Mooney
  - F.K. LeGoues
  - et al.
- 1994
- Journal of Applied Physics
Facet formation in strained Si_1-x Ge_x films
- - M.A. Lutz
  - R.M. Feenstra
  - et al.
- 1994
- Surface Science
Structural properties of a carbon-nanotube crystal
- - J. Tersoff
  - R.S. Ruoff
- 1994
- Physical Review Letters
Cyclic growth of strain-relaxed islands
- - F.K. LeGoues
  - M.C. Reuter
  - et al.
- 1994
- Physical Review Letters
LeGoues, Mooney, and Tersoff reply [2]
- - F.K. LeGoues
  - P.M. Mooney
  - et al.
- 1994
- Physical Review Letters
Chemical order in amorphous silicon carbide
- - J. Tersoff
- 1994
- Physical Review B
Competing relaxation mechanisms in strained layers
- - J. Tersoff
  - F. Legoues
- 1994
- Physical Review Letters
Calculation of temperature effects on the equilibrium crystal shape of Si near (100)
- - S. Mukherjee
  - E. Pehlke
  - et al.
- 1994
- Physical Review B
Critical island size for layer-by-layer growth
- - J. Tersoff
  - A.W. Denier Van Der Gon
  - et al.
- 1994
- Physical Review Letters