High-speed Germanium-on-SOI lateral PIN photodiodes
- G. Dehlinger
- S.J. Koester
- et al.
- 2004
- IEEE Photonics Technology Letters
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100 results for Steven J. Koester
Spin-based quantum dot quantum computing in silicon
- Mark A. Eriksson
- Mark Friesen
- et al.
- 2004
- Quantum Information Processing
High speed, lateral PIN photodiodes in silicon technologies
- Jeremy D. Schaub
- Steven J. Koester
- et al.
- 2004
- SPIE IOPTO 2004
High-performance SiGe MODFET technology
- S.J. Koester
- J.O. Chu
- et al.
- 2004
- MRS Proceedings 2004
Fabrication and Mobility Characteristics of Ultra-thin Strained Si Directly on Insulator (SSDOI) MOSFETs
- K. Rim
- K.K. Chan
- et al.
- 2003
- IEDM 2003
80 nm gate-length Si/Si0.7Ge0.3 n-MODFET with 194 GHz fmax
- S.J. Koester
- K.L. Saenger
- et al.
- 2003
- Electronics Letters
Implications of gate design on RF performance of sub-100 nm strained-Si/SiGe nMODFETs
- Q. Ouyang
- S.J. Koester
- et al.
- 2003
- SISPAD 2003
Static frequency divider circuit using 0.15 μm gate length Si0.2Ge0.8/Si0.7Ge0.3 p-MODFETs
- D. Singh
- S.J. Koester
- et al.
- 2003
- Electronics Letters
Integrated SiGe and Si device capabilities and trends for multi-gigahertz applications
- G. Freeman
- B. Jagannathan
- et al.
- 2003
- International Journal of High Speed Electronics and Systems
High-quality crystalline layer transfer from a silicon-on-insulator substrate onto a sapphire substrate using wafer bonding
- D. Singh
- L.T. Shi
- et al.
- 2003
- Journal of Electronic Materials