Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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182 results for Eduard Cartier

Anode hole injection and trapping in silicon dioxide
- - D.J. DiMaria
  - E. Cartier
  - et al.
- 1996
- Journal of Applied Physics
Stressing and high field transport studies on device-grade SiO₂ by ballistic electron emission spectroscopy
- - R. Ludeke
  - H.J. Wen
  - et al.
- 1996
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Hot electron transport through metal-oxide-semiconductor structure studied by ballistic electron emission spectroscopy
- - R. Ludeke
  - A. Bauer
  - et al.
- 1995
- Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Atomic hydrogen-induced degradation of thin SiO₂ gate oxides
- - E. Cartier
  - D.A. Buchanan
  - et al.
- 1995
- Journal of Non-Crystalline Solids
Mechanism for stress-induced leakage currents in thin silicon dioxide films
- - D.J. Dimaria
  - E. Cartier
- 1995
- Journal of Applied Physics
Hot electron transport in SiO₂ probed with a scanning tunnel microscope
- - R. Ludeke
  - A. Bauer
  - et al.
- 1995
- Applied Physics Letters
Anomalous positive charge formation by atomic hydrogen exposure
- - R.E. Stahlbush
  - E. Cartier
  - et al.
- 1995
- Microelectronic Engineering
Atomic hydrogen-induced degradation of the Si SiO₂ structure
- - E. Cartier
  - J.H. Stathis
- 1995
- Microelectronic Engineering
Atomic hydrogen-induced interface degradation of reoxidized-nitrided silicon dioxide on silicon
- - E. Cartier
  - D.A. Buchanan
  - et al.
- 1994
- Applied Physics Letters
Theory of high-field electron transport and impact ionization in silicon dioxide
- - D. Arnold
  - E. Cartier
  - et al.
- 1994
- Physical Review B