Performance assessment of scaled strained-Si channel-on-insulator (SSOI) CMOS
- Keunwoo Kim
- Ching-Te Chuang
- et al.
- 2004
- Solid-State Electronics
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53 results for Ken Rim
Fabrication and Mobility Characteristics of Ultra-thin Strained Si Directly on Insulator (SSDOI) MOSFETs
- K. Rim
- K.K. Chan
- et al.
- 2003
- IEDM 2003
Recent progress in devices and materials for CMOS technology
- H.-S. Philip Wong
- B. Doris
- et al.
- 2003
- VLSI-TSA 2003
Analysis and modeling methodology of strained-Si channel-on-insulator (SSOI) MOSFETs
- Keunwoo Kim
- Ching-Te Chuang
- et al.
- 2003
- VLSI-TSA 2003
Six-band k·p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness
- M.V. Fischetti
- Z. Ren
- et al.
- 2003
- Journal of Applied Physics
Strained Si CMOS (SS CMOS) technology: Opportunities and challenges
- K. Rim
- R. Anderson
- et al.
- 2003
- Solid-State Electronics
Performance assessment of scaled strained-Si channel-on-insulator (SSOI) CMOS
- Keunwoo Kim
- Ching-Te Chuang
- et al.
- 2002
- IEEE International SOI Conference 2002
Low field mobility characteristics of sub-100 nm unstrained and strained Si MOSFETs
- K. Rim
- S. Narasimha
- et al.
- 2002
- IEDM 2002
Performance enhancement on sub-70 nm strained silicon SOI MOSFETS on ultra-thin thermally mixed strained silicon/SiGe on insulator(TM-SGOI) substrate with raised S/D
- B.H. Lee
- A.C. Mocuta
- et al.
- 2002
- IEDM 2002
A high-speed, high-sensitivity silicon lateral trench photodetector
- Min Yang
- Kern Rim
- et al.
- 2002
- IEEE Electron Device Letters