Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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112 results for S.L. Wright

Landau-level broadening and scattering time in modulation doped GaAs/AlGaAs heterostructures
- - F. Fang
  - T.P. Smith III
  - et al.
- 1988
- Surface Science
IVA-3 Surface Recombination in GaAlAs/GaAs Heterostructure Bipolar Transistors
- - Sandip Tiwari
  - David J. Frank
  - et al.
- 1988
- IEEE T-ED
DX centers in AlGaAs p-n heterojunctions and heterojunction bipolar transistors
- - M.I. Nathan
  - S. Tiwari
  - et al.
- 1987
- Journal of Applied Physics
Tunneling and transverse wave vector conservation in GaAs/AlGaAs heterostructures
- - John A. Lebens
  - Robert H. Silsbee
  - et al.
- 1987
- Applied Physics Letters
Photoionization cross section of the DX center in Si-doped AlxGa1-xAs
- - R. Legros
  - P.M. Mooney
  - et al.
- 1987
- Physical Review B
IVA-5 Refractory p-Ohmic-Contact to GaAs and Ga_xAl₁ - _xAs (x ∼ 0.3) Based on Diffusion of Zn in a Rapid Thermal Furnace
- - Sandip Tiwari
  - Jeffrey Hintzman
  - et al.
- 1987
- IEEE T-ED
IIA-2 Saturable Charge FET
- - P. Solomon
  - D.J. Frank
  - et al.
- 1987
- IEEE T-ED
Transport and Related Properties of (Ga, Al)As/GaAs Double Heterostructure Bipolar Junction Transistors
- - Sandip Tiwari
  - Steven L. Wright
  - et al.
- 1987
- IEEE T-ED
Electron velocity and negative differential mobility in AlGaAs/GaAs modulation-doped heterostructures
- - W.T. Masselink
  - N. Braslau
  - et al.
- 1987
- Applied Physics Letters
The capture barrier of the DX center in Si-doped Al_xGa _1-xAs
- - P.M. Mooney
  - N. Caswell
  - et al.
- 1987
- Journal of Applied Physics