IVA-5 Refractory p-Ohmic-Contact to GaAs and GaxAl1 - xAs (x ∼ 0.3) Based on Diffusion of Zn in a Rapid Thermal Furnace
- Sandip Tiwari
- Jeffrey Hintzman
- et al.
- 1987
- IEEE T-ED
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112 results for S.L. Wright
The capture barrier of the DX center in Si-doped AlxGa 1-xAs
- P.M. Mooney
- N. Caswell
- et al.
- 1987
- Journal of Applied Physics
Symmetric-Gain, Zero-Offset, Self-Aligned, and Refractory-Contact Double HBT's
- Sandip Tiwari
- Steven L. Wright
- 1987
- IEEE Electron Device Letters
Depletion-Mode GaAs SISFET's By Selective Ion Implantation
- H. Baratte
- Paul M. Solomon
- et al.
- 1987
- IEEE Electron Device Letters
Electron velocity and negative differential mobility in AlGaAs/GaAs modulation-doped heterostructures
- W.T. Masselink
- N. Braslau
- et al.
- 1987
- Applied Physics Letters
Transport and Related Properties of (Ga, Al)As/GaAs Double Heterostructure Bipolar Junction Transistors
- Sandip Tiwari
- Steven L. Wright
- et al.
- 1987
- IEEE T-ED
IIA-2 Saturable Charge FET
- P. Solomon
- D.J. Frank
- et al.
- 1987
- IEEE T-ED
Effect of the silicon doping concentration on the recombination kinetics of DX centers in Al0.35Ga0.65As
- N. Caswell
- P.M. Mooney
- et al.
- 1986
- Applied Physics Letters
In situ contacts to GaAs based on InAs
- S.L. Wright
- R.F. Marks
- et al.
- 1986
- Applied Physics Letters
Intensity-dependent cyclotron resonance in a GaAs/GaAlAs two-dimensional electron gas
- G.A. Rodríguez
- R.M. Hart
- et al.
- 1986
- Applied Physics Letters