A 256-mcell phase-change memory chip operating at 2+ bit/cell
- Gael F. Close
- Urs Frey
- et al.
- 2013
- IEEE TCAS-I
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14 results for T. Maffitt
A study of write margin of spin torque transfer magnetic random access memory technology
- Tai Min
- Qiang Chen
- et al.
- 2010
- IEEE Transactions on Magnetics
Design considerations for MRAM
- Thomas M. Maffitt
- John K. DeBrosse
- et al.
- 2006
- IBM J. Res. Dev
A 16-Mb MR AM featuring bootstrapped write drivers
- Dietmar Gogl
- Christian Arndt
- et al.
- 2005
- IEEE Journal of Solid-State Circuits